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| TZS4678...TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise Applications Voltage stabilization 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z-current Junction temperature Storage temperature range Test Conditions RthJA x300K/W Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 -65...+175 Unit mW mA C C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=100mA Type Symbol VF Min Typ Max 1.5 Unit V Document Number 85613 Rev. 2, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 1 (6) TZS4678...TZS4717 Vishay Telefunken Type 1) Zener Voltage VZ @ IZ = 50mA Typ. 1) V 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 Max. Reverse Current IR 3) Test Voltage VR 3) V 1.0 1.0 1.0 1.0 1.0 1.0 1.5 2.0 2.0 2.0 3.0 3.0 4.0 5.0 5.1 5.7 6.2 6.6 6.9 7.6 8.4 9.1 9.8 10.6 11.4 12.1 12.9 13.6 14.4 15.2 16.7 18.2 19.0 20.4 21.2 22.8 25.0 27.3 29.6 32.6 Max. Zener Current IZM 2) mA 120 110 100 95 90 85 80 75 70 65 60 55 50 45 35 31.8 29.0 27.4 26.2 24.8 21.6 20.4 19.0 17.5 16.3 15.4 14.5 13.2 12.5 11.9 10.8 9.9 9.5 8.8 8.5 7.9 7.2 6.6 6.1 5.5 Max. Voltage Change TZS4678 TZS4679 TZS4680 TZS4681 TZS4682 TZS4683 TZS4684 TZS4685 TZS4686 TZS4687 TZS4688 TZS4689 TZS4690 TZS4691 TZS4692 TZS4693 TZS4694 TZS4695 TZS4696 TZS4697 TZS4698 TZS4699 TZS4700 TZS4701 TZS4702 TZS4703 TZS4704 TZS4705 TZS4706 TZS4707 TZS4708 TZS4709 TZS4710 TZS4711 TZS4712 TZS4713 TZS4714 TZS4715 TZS4716 TZS4717 Min. V 1.710 1.900 2.090 2.280 2.565 2.850 3.135 3.420 3.705 4.085 4.465 4.845 5.320 5.890 6.460 7.125 7.790 8.265 8.645 9.500 10.45 11.40 12.35 13.30 14.25 15.20 16.15 17.10 18.05 19.00 20.90 22.80 23.75 25.65 26.60 28.50 31.35 34.20 37.05 40.85 Max. V 1.890 2.100 2.310 2.520 2.835 3.150 3.465 3.780 4.095 4.515 4.935 5.355 5.880 6.510 7.140 7.875 8.610 9.135 9.555 10.50 11.55 12.60 13.65 14.70 15.75 16.80 17.85 18.90 19.95 21.00 23.10 25.20 26.25 28.35 29.40 31.50 34.65 37.80 40.95 45.15 mA DVZ 4) V 0.70 0.70 0.75 0.80 0.85 0.90 0.95 0.95 0.97 0.99 0.99 0.97 0.96 0.95 0.90 0.75 0.50 0.10 0.08 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.22 0.24 0.25 0.27 0.28 0.30 0.33 0.36 0.39 0.43 7.5 5.0 4.0 2.0 1.0 0.8 7.5 7.5 5.0 4.0 10 10 10 10 10 10 1.0 1.0 1.0 1.0 0,05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 www.vishay.de * FaxBack +1-408-970-5600 2 (6) Document Number85613 Rev. 2, 01-Apr-99 TZS4678...TZS4717 Vishay Telefunken 1.) Toleranzing and voltage designation (VZ). The type numbers shown have a standard tolerance of 5% on the nominal zener voltage. 2.) Maximum zener current ratings (IZM). Maximum zener current ratings are based on maximum zener voltage of the individual units. 3.) Reverse leakage current (IR). Reverse leakage currents are guaranteed and measured at VR as shown on the table. 4.) Maximum voltage change (DVZ). Voltage change is equal to the difference between VZ at 100mA and VZ at 10mA. Characteristics (Tj = 25_C unless otherwise specified) 600 Ptot - Total Power Dissipation ( mW ) 500 400 300 200 100 0 0 95 9602 1.3 VZtn - Relative Voltage Change VZtn=VZt/VZ(25C) 1.2 TKVZ=10 10-4/K 8 6 10-4/K 10-4/K 10-4/K 10-4/K 1.1 4 2 1.0 0.9 0.8 -60 0 -2 10-4/K -4 10-4/K 40 80 120 160 200 95 9599 0 60 120 180 240 Tamb - Ambient Temperature ( C ) Tj - Junction Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature 1000 - Voltage Change ( mV ) Figure 3. Typical Change of Working Voltage vs. Junction Temperature TK VZ - Temperature Coefficient of VZ ( 10 -4 /K ) 15 Tj = 25C 100 10 5 IZ=5mA 0 IZ=5mA 10 DVZ 1 0 95 9598 -5 0 10 20 30 40 50 VZ - Z-Voltage ( V ) 5 10 15 20 25 VZ - Z-Voltage ( V ) 95 9600 Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25C Figure 4. Temperature Coefficient of Vz vs. Z-Voltage Document Number 85613 Rev. 2, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 3 (6) TZS4678...TZS4717 Vishay Telefunken 200 C D - Diode Capacitance ( pF ) 50 Ptot=500mW Tamb=25C VR = 2V 100 Tj = 25C IZ - Z-Current ( mA ) 25 95 9607 150 40 30 20 10 50 0 0 95 9601 0 5 10 15 20 15 20 25 30 35 VZ - Z-Voltage ( V ) VZ - Z-Voltage ( V ) Figure 5. Diode Capacitance vs. Z-Voltage 1000 100 IF - Forward Current ( mA ) r Z - Differential Z-Resistance ( W ) Figure 8. Z-Current vs. Z-Voltage IZ=1mA 100 10 Tj = 25C 1 5mA 10 10mA 0.1 0.01 1 0 0.001 0 95 9605 Tj = 25C 5 10 15 20 25 0.2 0.4 0.6 0.8 1.0 95 9606 VZ - Z-Voltage ( V ) VF - Forward Voltage ( V ) Figure 6. Forward Current vs. Forward Voltage 100 Figure 9. Differential Z-Resistance vs. Z-Voltage IZ - Z-Current ( mA ) 80 Ptot=500mW Tamb=25C 60 40 20 0 0 4 8 12 16 20 95 9604 VZ - Z-Voltage ( V ) Figure 7. Z-Current vs. Z-Voltage www.vishay.de * FaxBack +1-408-970-5600 4 (6) Document Number85613 Rev. 2, 01-Apr-99 TZS4678...TZS4717 Vishay Telefunken Z thp - Thermal Resistance for Pulse Cond. (K/W) 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse 10 tp/T=0.1 tp/T=0.05 1 10-1 tp/T=0.02 iZM=(-VZ+(VZ2+4rzj tp/T=0.01 DT=Tjmax-Tamb RthJA=300K/W DT/Zthp)1/2)/(2rzj) 100 101 tp - Pulse Length ( ms ) 102 95 9603 Figure 10. Thermal Response Dimensions in mm 96 12071 Document Number 85613 Rev. 2, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 5 (6) TZS4678...TZS4717 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 6 (6) Document Number85613 Rev. 2, 01-Apr-99 |
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